 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICROWAVE CORPORATION v01.0701 HMC315 Features Saturated Output Power: +17 dBm Output IP3: +33 dBm Gain: 15 dB Single Supply: +5V to +7V Ultra Small Package: SOT26 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT Typical Applications The HMC315 is ideal for: * Fiber Optic OC-48 Systems * Microwave Test Instrumentation * Broadband Mobile Radio Platforms Functional Diagram General Description The HMC315 is an ultra broadband GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single positive supply. The surface mount SOT26 amplifier can be used as a broadband gain stage, or used with external matching for optimized narrow band applications. The Darlington configuration results in reduced sensitivity to normal process variations and provides a good 50-ohm input/output port match. The amplifier provides 15 dB of gain and +17 dBm of saturated power while operating from a single positive +7V supply. Electrical Specifications, TA = +25 C, As a Function of Vcc Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (OIP3) @ 1.0 GHz Noise Figure Supply Current (Icc) 7 3 18 8 10 23 11 Typ. DC - 7 14 0.015 10 7 21 11 13 26 6.5 30 17 0.025 7 3 18 13 15 30 11 Max. Min. Typ. DC - 7 15 0.015 10 7 21 16 17.5 33 6.5 50 18 0.025 Max. GHz dB dB/C dB dB dB dBm dBm dBm dB mA Vcc = +7V Units 8 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0701 HMC315 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Gain & Return Loss @ Vcc= +7V 20 15 10 S11 S21 S22 Gain & Return Loss @ Vcc= +5V 20 15 10 S11 S21 S22 8 AMPLIFIERS - SMT 8 - 81 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 RESPONSE (dB) 7 8 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) FREQUENCY (GHz) Gain vs. Temperature @ Vcc= +7V 20 18 16 14 Gain vs. Temperature @ Vcc= +5V 20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +60C -40C GAIN (dB) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +60C -40C Input & Output Return Loss vs. Vcc Bias 0 Reverse Isolation vs. Vcc Bias 0 -5 S12 Vcc=7V S12 Vcc=5V -5 RETURN LOSS (dB) ISOLATION (dB) 6 7 8 -10 -15 -20 -25 -30 -10 -15 S11 Vcc=7V S22 Vcc=7V S11 Vcc=5V S22 Vcc=5V -20 -25 0 1 2 3 4 5 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0701 MICROWAVE CORPORATION HMC315 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT P1dB vs. Temperature @ Vcc= +7V 20 18 16 14 P1dB vs. Temperature @ Vcc= +5V 20 18 16 14 +25C +60C -40C P1dB (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +60C -40C P1dB (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Psat vs. Temperature @ Vcc= +7V 20 18 16 14 Psat vs. Temperature @ Vcc= +5V 20 18 16 14 +25C +60C -40C Psat (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +60C -40C Psat (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vcc= +7V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0 1 2 3 4 5 6 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vcc= +5V 30 28 +25C +60C -40C +25C +60C -40C 26 24 IP3 (dBm) IP3 (dBm) 7 8 22 20 18 16 14 12 10 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 8 - 82 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0701 MICROWAVE CORPORATION HMC315 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Power Compression @ 1.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Power Compression @ 1.0 GHz, Vcc= +5V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 8 AMPLIFIERS - SMT 8 - 83 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) Pout (dBm), GAIN (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 3.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Power Compression @ 3.0 GHz, Vcc= +5V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 Pout (dBm), GAIN (dB), PAE (%) Pout Gain (dB) PAE (%) Pout (dBm), GAIN (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0701 MICROWAVE CORPORATION HMC315 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT Application Circuit Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +7.0 Vdc) Junction Temperature Continuous Pdiss (T = 60 C) (derate 4.14 mW/C above 60 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +7.5 Vdc +20 dBm 150 C 0.373 W 242 C/W -65 to +150 C -40 to +60 C Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8 - 84 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0701 MICROWAVE CORPORATION HMC315 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1, J2 U1 PCB* Description PC Mount SMA Connector HMC315 Amplifier Evaluation PCB 1.5" x 1.5" The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 85 |
Price & Availability of HMC315
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |